Optimized for Low Profile Server Power, PV
Micro Inverter, and Slim Adapters
Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a
designer, developer, and global supplier of a broad range of power
semiconductors and power ICs, and digital power products, today
announced the release of 600V 110mOhm and 140mOhm αMOS5™ Super
Junction MOSFETs in DFN8x8 Package. αMOS5 is AOS’s latest
generation of high voltage MOSFET, designed to meet the high
efficiency and high-density needs for Quick Charger, Adapter, PC
Power, Server, Industrial Power, Telecom, and Hyperscale Datacenter
applications.
This press release features multimedia. View
the full release here:
https://www.businesswire.com/news/home/20220310005987/en/
Optimized for Low Profile Server Power,
PV Micro Inverter, and Slim Adapters (Graphic: Business Wire)
Today’s Server Power design is driven by two major
differentiators – high efficiency and a slim form factor to
accommodate 1U, 0.5U, or even thinner systems. As higher power
output is required while board space is further reduced, there are
no other ways but choosing components with lower losses and small
dimensions. Given the large stray inductance (larger Eon losses)
and unfit height, the traditional through-hole package types are no
longer the options. Typical high-power PFC and LLC stages also use
gate drivers to control MOSFETs. Packages with Kelvin Sources will
allow separate power and drive source connections, thus suppressing
di/dt induced Vgs transients and turn-on losses. To further reduce
system losses, other than minimizing magnetic and switching losses
by leveraging ZVS/ZCS topologies, an increasingly adopted solution
is to replace the diode bridge with high voltage MOSFETs, which
serves as an Active Bridge Rectifer through the control of a driver
(e.g., AOS AOZ7200).
AOS’s newly released AONV110A60 and AONV140A60 are two 600V low
ohmic MOSFETs packaged in the 8mm x 8mm x 0.9mm DFN8x8 with Kelvin
Source. Compared to other packages such as D2PAK, DPAK, or
TO-220(F), DFN8x8 is a smaller package offering a well-balanced
footprint and thermal dissipation. The 64mm² footprint makes
AONV110A60 and AONV140A60 ideal for Active Bridge and high-density
PFC/Flyback/LLC applications. In an internal benchmark, we compared
4 x AONV110A60 with the typical 8A GBU806 diode bridge under the
300W 90Vac scenario, the Active Bridge solution with AONV110A60
reduced the power loss by almost 50% (3.16W loss with Active Bridge
vs. 6.12W loss with Diode Bridge) and increased the efficiency by
1.1%. The two DFN8x8 devices also find great fit in applications
with only PFC and LLC stages, given 57% and 80% reduction in
footprint and height, respectively, versus D2PAK.
Besides Server applications, AONV110A60 and AONV140A60 also
target Solar Micro Inverter and Slim Adapter applications.
Micro-Inverter design sees the trend of converting solar energy
from two panels via one inverter, which means doubled power rating
but not necessarily doubled the system size. DFN8x8 devices could
help achieve this goal by paralleling and reducing effective Rdson,
and accordingly, power losses. DFN8x8’s Kelvin Source would be much
favored in a high Fsw inverter design, where switching losses are
more significant and need to be minimized. In slim adapter designs,
DFN8x8 devices, together with high Fsw controllers and planar
transformers, could easily push the system density to 20W+/ in3 and
efficiency up to 93%+ (with Active Bridges).
“Years ago, we could hardly imagine high voltage DFN8x8 devices
widely adopted for server systems above 400W, even limited in low
power SMPS, since people are used to through-hole or larger
packages such as TO-220(F) or D2PAK. The power design concept has
changed tremendously and rapidly with more and more DFN8x8 devices
used in Active-Bridge, PFC, Half-Bridge, and Full-Bridge
topologies. DFN8x8 devices’ value proposition is clear, it is a
high voltage SMD package that offers smaller form factor, better
switching performance (Low Eon), higher system reliability (Low
Gate Ringing), and easier board assembly. AOS will continue to
provide our customers with differentiated solutions that best serve
the application needs and mission profiles from low power universal
charging to high power server, solar, and telecom rectifiers,” said
Richard Zhang, Director of High Voltage MOSFET Product Line at
AOS.
Technical Highlights
- Low Ohmic devices packaged in 64mm² DFN8x8
- Package Thickness < 1mm
- Kelvin Source and Low Eon/Gate Oscillation
- Automated SMT assembly
- MSL Level 1
Pricing and Availability
The AONV110A60 (600V 110mOhm DFN8x8) and AONV140A60 (600V
140mOhm DFN8x8) are immediately available in production quantities
with a lead-time of 24 weeks. The unit price in 1000-piece
quantities is $3.96 for AONV110A60 and $3.36 for AONV140A60.
About AOS
Alpha and Omega Semiconductor Limited, or AOS, is a designer,
developer, and global supplier of a broad range of power
semiconductors, including a wide portfolio of Power MOSFET, IGBT,
IPM, TVS, HVIC, GaN/SiC, Power IC, and
Digital Power products. AOS has developed extensive intellectual
property and technical knowledge that encompasses the latest
advancements in the power semiconductor industry, which enables us
to introduce innovative products to address the increasingly
complex power requirements of advanced electronics. AOS
differentiates itself by integrating its Discrete and IC
semiconductor process technology, product design, and advanced
packaging know-how to develop high-performance power management
solutions. AOS’s portfolio of products targets high-volume
applications, including portable computers, flat-panel TVs, LED
lighting, smartphones, battery packs, consumer and industrial motor
controls, automotive electronics, and power supplies for TVs,
computers, servers, and telecommunications equipment. For more
information, please visit www.aosmd.com.
Forward-Looking Statements
This press release contains forward-looking statements that are
based on current expectations, estimates, forecasts, and
projections of future performance based on management’s judgment,
beliefs, current trends, and anticipated product performance. These
forward-looking statements include, without limitation, references
to the efficiency and capability of new products and the potential
to expand into new markets. Forward-looking statements involve
risks and uncertainties that may cause actual results to differ
materially from those contained in the forward-looking statements.
These factors include but are not limited to the actual product
performance in volume production, the quality and reliability of
the product, our ability to achieve design wins, the general
business and economic conditions, the state of the semiconductor
industry, and other risks as described in the Company’s annual
report and other filings with the U.S. Securities and Exchange
Commission. Although the Company believes that the expectations
reflected in the forward-looking statements are reasonable, it
cannot guarantee future results, level of activity, performance, or
achievements. You should not place undue reliance on these
forward-looking statements. All information provided in this press
release is as of today’s date unless otherwise stated, and AOS
undertakes no duty to update such information, except as required
under applicable law.
View source
version on businesswire.com: https://www.businesswire.com/news/home/20220310005987/en/
Mina Galvan Tel: 408.789.3233 Email: mina.galvan@aosmd.com
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