Infineon Ships Industry's First CMOS RF Switches With GaAs Performance
05 February 2008 - 12:00AM
Marketwired
NEUBIBERG, GERMANY (NYSE: IFX) announced it is shipping in
volume the world's first RF switches that are manufactured in a
CMOS-based process on silicon wafers and offer the equivalent
performance of RF switches manufactured in Gallium Arsenide (GaAs)
process technology -- a technology breakthrough that has never
before been achieved. So far, CMOS-based RF switches had to be
manufactured on dedicated, much more expensive sapphire wafers to
reach the performance of GaAs switches.
The first CMOS RF switch of a whole new family, the BGS12A, is
available in a fine-pitch Wafer-Level Package (WLP) with dimensions
of only 0.79mm x 0.54mm, which is approximately 60 percent less
printed circuit board (PCB) space compared to the smallest packaged
GaAs RF switch on the market. In many wireless products, including
cellular phones, WLAN, WiMAX, GPS navigation systems, Bluetooth
accessories or remote-keyless entry, RF switches are typically used
to implement switching functions for receiving and transmitting
(Rx/Tx) data, band select or antenna diversity applications and
also enable worldwide roaming. On average, mobile devices are
typically equipped with one RF switch. However, some multi-band
multi-mode mobile phones are fitted with up to four RF
switches.
"Infineon's CMOS-based RF switches come in a tiny chip-scale
package and require no further external components, such as level
shifters, offering more space savings for various board designs,"
said Michael Mauer, senior director, Silicon Discretes at Infineon
Technologies. "With the increasing complexity of modern mobile
devices, RF switches are expected to substitute today's PIN diodes
in the next five years."
According to the U.S. market research group Strategy Analytics,
Boston, the worldwide market for RF switches accounted for
approximately two billion pieces in 2006 and is expected to double
to about four billion pieces by the year 2011.
The new Infineon RF switches are manufactured in a unique RF
CMOS technology, combining the benefits of CMOS with outstanding RF
performance, such as low insertion loss, low harmonic distortion,
good isolation and high power levels. The inherent CMOS advantages
include high integration capabilities, cost effectiveness and
excellent electrostatic discharge (ESD) robustness. Compared to
existing solutions, the CMOS-based RF switches offer the highest
integration capabilities; are less expensive than GaAs devices; and
allow higher battery life than PIN diodes, because current
consumption is significantly reduced. All Infineon RF switches do
not require external direct current (DC) blocking capacitors and
integrate the complete control logic. CMOS compatible logic levels
(1.4 V to 2.8 V) eliminate the need of external level shifters.
Further details on Infineon's first CMOS RF switch (BGS12A)
The BGS12A is Infineon's first product in the new CMOS-based RF
switches family. It is a general purpose single-pole double-throw
(SPDT) RF switch designed for power levels of up to 20dBm, with a
P-1dB above 30dBm. The new RF switch offers a high RF performance
with an insertion loss of only 0.3dB at a frequency of 1.0GHz, low
harmonic distortion, good isolation (34dB at 1.0GHz), and fast
switching time of less than 4�s. The interfaces are protected
against 1.5kV HBM (Human Body Model) ESD which improves the
production yield of manufacturers of mobile device modules and
achieves the required ESD levels. The BGS12A is ideal for use in
low- and medium-power applications of up to 3GHz.
Pricing and Availability
The BGS12A is available in volume quantities. Pricing starts at
USD 0.70 per piece for quantities of 1,000 units.
Infineon will introduce further members of the new RF switch
family with additional package options including the thin small
leadless package (TSLP) with up to 16 pins, higher power levels of
38dBm and up to nine Tx/Rx ports for a broad range of wireless
applications. Volume production of the other family members is
expected to begin the second half of 2008.
For more information about Infineon's CMOS RF switches, please
go to www.infineon.com/RFswitches or visit us at the Mobile World
Congress (Barcelona, Spain, February 12-14, 2008) in hall 1 on
booth #B19.
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2007 fiscal year (ending September), the
company reported sales of Euro 7.7 billion (including Qimonda sales
of Euro 3.6 billion) with approximately 43,000 employees worldwide
(including approximately 13,500 Qimonda employees). With a global
presence, Infineon operates through its subsidiaries in the U.S.
from Milpitas, CA, in the Asia-Pacific region from Singapore, and
in Japan from Tokyo. Infineon is listed on the Frankfurt Stock
Exchange and on the New York Stock Exchange (ticker symbol:
IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/news/
CONTACTS: Worldwide Headquarters Monika Sonntag +49 89 234 24497
monika.sonntag@infineon.com U.S.A. Agnes Toan +1 408 503 2587
agnes.toan@infineon.com Asia Chi Kang David Ong +65 6876 3070
david.ong@infineon.com Japan Hirotaka Shiroguchi +81 3 5745 7340
hirotaka.shiroguchi@infineon.com Investor Relations EU/APAC/USA/CAN
+49 89 234 26655 investor.relations@infineon.com
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