Infineon Introduces Third Generation Silicon Carbide Schottky Diodes; Improved Performance Helps Reduce Cost of Power Conversion
17 February 2009 - 2:32AM
Marketwired
Infineon Technologies AG (FRANKFURT: IFX) (NYSE: IFX), a
world-leading provider of power semiconductors and the pioneering
supplier of silicon carbide (SiC) Schottky diodes, today at the
Applied Power Electronics Conference and Exhibition (APEC),
introduced its third generation thinQ!(TM) SiC Schottky diodes.
Featuring the industry's lowest device capacitance for any given
current rating, which enhances overall system efficiency at higher
switching frequencies and under light load conditions, the new
thinQ! diodes help reduce overall power converter system costs.
Additionally, with its third generation, Infineon provides the
industry's broadest SiC Schottky diode portfolio which not only
includes the TO-220 package (2-pin version) but also the DPAK
package for high power density surface mount designs.
Main application areas for SiC Schottky diodes are active Power
Factor Correction (CCM PFC) in Switched-Mode Power Supplies (SMPS)
and other AC/DC and DC/DC power conversion applications such as
solar inverters and motor drives.
Compared to the second generation, the device capacitances of
the Infineon third generation SiC Schottky diodes are about 40
percent lower, which reduces switching losses. For example in a 1
kW PFC stage operating at 250 kHz there will be an improvement of
0.4 percent in the overall efficiency under 20 percent load
conditions. Higher switching frequencies allow the use of smaller
and lower cost passive components, such as inductors and
capacitors, resulting in higher power density designs. Reduced
power losses result in several benefits, including reduced cooling
requirements in terms of size and number of heatsinks and fans,
which enables system cost reduction and increased reliability
levels. This also contributes to reduced system level energy
requirements to provide an appropriate cooling environment.
Infineon expects system cost reductions in some SMPS applications
of up to 20 percent.
"Infineon was the world's first provider of SiC Schottky diodes,
introducing its first products in 2001. During the last eight
years, Infineon has made a number of significant improvements to
its SiC Schottky diode technology in areas such as surge current
stability, switching performance and in product cost, extending the
benefits of SiC technology to more applications and making
solutions more affordable than ever," said Andreas Urschitz, vice
president and general manager, Power Semiconductor Discretes, at
Infineon Technologies. "SiC is a truly innovative technology which
helps to support the global climate saving trend and to drive new
markets such as solar energy and high-efficiency lighting systems.
It clearly underlines Infineon's leadership in and commitment to
the power management market."
Availability, packaging and price
Infineon's third generation thinQ! SiC Schottky diodes are
available in 600 Volts (3, 4, 5, 6, 8, 9, 10, and 12 A, in both
TO-220 and DPAK packages, and in 1200 V products (2, 5, 8, 10 and
15 A) in TO-220 package. Sampling started in January 2009, with
series production scheduled in early spring 2009. In quantities of
10,000 pieces, third generation SiC Schottky diodes with a blocking
voltage of 600 Volts (3 A) are priced at Euro 0.61 (US $ 0.85) per
unit. The 4 A version is priced at Euro 0.85 (US $ 1.19) per unit,
the 8 A version at Euro 1.89 (US $ 2.65) per unit.
Further information on Infineon's SiC Schottky diodes is
available at www.infineon.com/sic. Further details on Infineon's
power semiconductor product portfolio is available at
www.infineon.com/powermanagementdiscretes.
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2008 fiscal year (ending September), the
company reported sales of Euro 4.3 billion with approximately
29,100 employees worldwide. With a global presence, Infineon
operates through its subsidiaries in the U.S. from Milpitas, CA, in
the Asia-Pacific region from Singapore, and in Japan from Tokyo.
Infineon is listed on the Frankfurt Stock Exchange and on the New
York Stock Exchange (ticker symbol: IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/.
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Media Relations Technology: Worldwide Headquarters Name: Monika
Sonntag Phone: +49 89 234 24497 Email: monika.sonntag@infineon.com
U.S.A. Name: Mitch Ahiers Phone: +1 408 503 2791 Email:
mitch.ahiers@infineon.com
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