DUBLIN, Oct. 8, 2021 /PRNewswire/ -- Navitas
Semiconductor, the industry-leader in gallium nitride (GaN) power
integrated circuits (ICs), has announced the opening of a new
office in Shenzhen, China which
offers a 300% increase in capabilities to support extraordinary
revenue growth in that region. The state-of-the-art facility offers
significant engineering capacity for Navitas to co-develop
GaN-based power systems with customers and design partners. This
investment supports the rapid growth of GaN mobile fast chargers,
as well as the company's recently-announced expansion plans to
enable GaN-based data centers, solar installations and electric
vehicles, which represent a multi-$B market opportunity for the
company.
The new facilities demonstrate our commitment to support expanded
customer demands in China.
Gallium nitride (GaN) is a next-generation semiconductor
technology that runs up to 20x faster than legacy silicon, and
enables up to 3x more power and 3x faster charging in half the size
and weight. Navitas' GaNFast™ power ICs integrate GaN power and
drive plus protection and control to deliver simple, small, fast
and efficient performance. With over 130 patents issued or pending,
and significant trade secrets including a proprietary process
design kit (PDK), Navitas believes it has a multi-year lead in
next-generation GaN power ICs.
Data center upgrades from legacy silicon to GaN are estimated to
save almost $2B/year in electricity
costs, while GaN adoption in solar microinverters has been
estimated by Enphase Energy to enable 10x faster switching and a
significant reduction in costs. Per-vehicle GaN content in
passenger EVs is estimated as $50 for
on-board fast chargers, $15 for DC-DC
converters and then up to $200 for
later adoption in traction drive.
"Alongside Hangzhou and Shanghai, the new state-of-the-art
Shenzhen office is another,
significant addition to Navitas China," said Charles (Jingjie) ZHA,
VP and general manager of Navitas China. "Chinese demand for
next-generation power systems is growing exponentially and with the
world's only fully-integrated GaN power ICs, Navitas is in a
fantastic position to capitalize on that growth. The new facilities
demonstrate our commitment to support expanded customer demands in
China."
Navitas' new office is in the iconic Baidu International
Building, in the high-density Nanshan District. The design itself
is an interpretation of ancient Chinese poetry into the binary
codes that power the digital age, while also representing the
client's corporate temperament to the world. The building won the
Council on Tall Buildings and Urban Habitat 2019 award for
sustainable and healthy cities, which reflects Navitas' goal to
"Electrifying our World™". Navitas estimates that each GaN power IC
shipped saves 4kg of CO2 emissions vs. legacy silicon
chips.
About Navitas
Navitas Semiconductor Limited is the industry leader in GaN
power IC's, founded in 2014. Navitas has a strong and growing team
of power semiconductor industry experts with a combined 300 years
of experience in materials, devices, applications, systems and
marketing, plus a proven record of innovation with over 200 patents
among its founders. GaN power ICs integrate GaN power with drive,
control and protection to enable faster charging, higher power
density and greater energy savings for mobile, consumer,
enterprise, eMobility and new energy markets. Over 130 Navitas
patents are issued or pending, and over 25 million GaNFast power
ICs have been shipped with zero reported GaN field failures. On
May 7th, 2021, Navitas announced
plans to "Go Public at an Enterprise
Value of $1.04 Billion via Live Oak
II (NYSE: LOKB) SPAC Business Combination.
Navitas Semiconductor, GaNFast and the Navitas
logo are trademarks or registered trademarks of Navitas
Semiconductor Limited. All other brands, product names and marks
are or may be trademarks or registered trademarks used to identify
products or services of their respective owners.
Contact Information
Stephen
Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
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SOURCE Navitas Semiconductor
