Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment
25 September 2024 - 12:00PM
Business Wire
Toshiba Electronic Devices & Storage Corporation ("Toshiba")
has added the “TRSxxx120Hx Series” of 1200V products to its lineup
of third-generation silicon carbide (SiC) Schottky barrier diodes
(SBD) for industrial equipment, such as photovoltaic inverters, EV
charging stations and switching power supplies. Toshiba today
started shipments of the ten new products in the series, five in a
TO-247-2L package and five in a TO-247 package.
This press release features multimedia. View
the full release here:
https://www.businesswire.com/news/home/20240924320459/en/
Toshiba: 1200V third-generation SiC
Schottky barrier diodes. (Graphic: Business Wire)
The new TRSxxx120Hx Series are 1200V products that use the
improved junction-barrier Schottky (JBS) structure[1] of Toshiba’s
third-generation 650V SiC SBD. Use of a new metal in the junction
barrier allows the new products to achieve industry-leading [2] low
forward voltage of 1.27V (typ.), low total capacitive charge and
low reverse current. This significantly reduces equipment power
loss in more higher power applications.
Toshiba will continue to expand its SiC power device lineup, and
to focus on improving efficiency that reduces power loss in
industrial power equipment.
Notes: [1] Improved JBS Structure: A structure that incorporates
the Merged PiN Schottky (MPS) structure, which reduces forward
voltage at high currents, into the JBS structure, which lowers the
electric field at the Schottky interface and reduces current
leakage. [2] Among 1200V SiC SBDs. As of September 2024, Toshiba
survey.
Applications
- Photovoltaic inverters
- EV charging stations
- Switching power supplies for industrial equipment, UPS
Features
- Third-generation 1200 V SiC SBD
- Industry-leading[2] low forward voltage: VF=1.27V (typ.)
(IF=IF(DC))
- Low total capacitive charge: QC=109nC (typ.) (VR=800V, f=1MHz)
for TRS20H120H
- Low reverse current: IR=2.0μA (typ.) (VR=1200V) for
TRS20H120H
Main Specifications
(Unless otherwise specified, Ta
=25°C)
Part number
Package
Absolute maximum ratings
Electrical characteristics
Sample Check &
Availability
Repetitive peak reverse
voltage
VRRM
(V)
Forward
DC
current
IF(DC)
(A)
Non-repetitive
peak forward
surge current
IFSM
(A)
Forward voltage
(pulse measurement)
VF
(V)
Reverse current
(pulse measurement)
IR
(μA)
Total capacitive charge
QC
(nC)
Temperature conditions
Tc
(°C)
f=50Hz
(half-sine wave, t=10ms),
Tc=25°C
IF=IF(DC)
VR=1200V
VR=800V, f=1MHz
Typ.
Typ.
Typ.
TRS10H120H
TO-247-2L
1200
10
160
80
1.27
1.0
61
Buy Online
TRS15H120H
15
157
110
1.4
89
Buy Online
TRS20H120H
20
155
140
2.0
109
Buy Online
TRS30H120H
30
150
210
2.8
162
Buy Online
TRS40H120H
40
147
270
3.6
220
Buy Online
TRS10N120HB
TO-247
5 (Per leg)
10 (Both legs)
160
40 (Per leg)
80 (Both legs)
1.27
(Per leg)
0.5
(Per leg)
30
(Per leg)
Buy Online
TRS15N120HB
7.5 (Per leg)
15 (Both legs)
157
55 (Per leg)
110 (Both legs)
0.7
(Per leg)
43
(Per leg)
Buy Online
TRS20N120HB
10 (Per leg)
20 (Both legs)
155
70 (Per leg)
140 (Both legs)
1.0
(Per leg)
57
(Per leg)
Buy Online
TRS30N120HB
15 (Per leg)
30 (Both legs)
150
105 (Per leg)
210 (Both legs)
1.4
(Per leg)
80
(Per leg)
Buy Online
TRS40N120HB
20 (Per leg)
40 (Both legs)
147
135 (Per leg)
270 (Both legs)
1.8
(Per leg)
108
(Per leg)
Buy Online
Follow the links below for more on the new products. TRS10H120H
TRS15H120H TRS20H120H TRS30H120H TRS40H120H TRS10N120HB TRS15N120HB
TRS20N120HB TRS30N120HB TRS40N120HB
Follow the links below for more on Toshiba's SiC SBDs.
SiC Schottky Barrier Diodes 3rd generation SiC Schottky barrier
diode (SBD)
Follow the link below for more on Toshiba’s SiC Power
Devices. SiC Power Devices
To check availability of the new products at online
distributors, visit: TRS10H120H Buy Online TRS15H120H Buy Online
TRS20H120H Buy Online TRS30H120H Buy Online TRS40H120H Buy Online
TRS10N120HB Buy Online TRS15N120HB Buy Online TRS20N120HB Buy
Online TRS30N120HB Buy Online TRS40N120HB Buy Online
* Company names, product names, and service names may be
trademarks of their respective companies. * Information in this
document, including product prices and specifications, content of
services and contact information, is current on the date of the
announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage
Corporation
Toshiba Electronic Devices & Storage Corporation, a leading
supplier of advanced semiconductor and storage solutions, draws on
over half a century of experience and innovation to offer customers
and business partners outstanding discrete semiconductors, system
LSIs and HDD products.
Its 19,400 employees around the world share a determination to
maximize product value, and to promote close collaboration with
customers in the co-creation of value and new markets. The company
looks forward to building and to contributing to a better future
for people everywhere.
Find out more at
https://toshiba.semicon-storage.com/ap-en/top.html
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