Navitas Powers Samsung Galaxy S24 with Integrated AI
22 February 2024 - 12:30AM
Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,
next-generation power semiconductor company and industry leader in
gallium nitride (GaN) power ICs and silicon carbide (SiC)
technology has announced that its GaNFast™ power ICs drive
Samsung’s 25 W “Super-Fast Charging” (SFC) for the new, AI-enhanced
Galaxy S24 smartphone.
Flagship hardware specifications include a 2340 x 1080 (FHD+)
dynamic AMOLED 2X, and 120 Hz screen, plus the Galaxy S24 delivers
innovative and practical AI features to help transform the way
users communicate, create and discover the world. Galaxy AI
features like Live Translate, Chat Assist and new “Circle to
Search” with Google, to improve nearly every experience that S24
users can enjoy.
The 25 W GaNFast unit delivers 50% charge to the high-capacity
4000 mAh battery in only 30 minutes, while the USB PD 3.0 (Type-C)
specification makes it compatible with other Samsung products
including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip and
Galaxy A23.
Designed with sustainability in mind, the 25 W power adapter
features a 75% reduction in power consumption sleep mode. Navitas’
GaNFast technology is deployed in a high-frequency, quasi-resonant
(HFQR) topology running at 150 kHz – 3x faster than standard
silicon designs – and delivers a 30% size shrink vs. conventional
charger designs.
“We are excited to extend our relationship with Samsung as they
continue to develop groundbreaking mobile phone technology,” said
David Carroll, Sr. VP Worldwide Sales for Navitas. “Deploying
GaNFast ICs has allowed Samsung to create an ultra-compact,
lightweight and efficient 25W adapter that can rapidly re-charge
the new Galaxy S24 and a variety of other phones and accessories in
the Samsung range.”
About NavitasNavitas
Semiconductor (Nasdaq: NVTS) is the only pure-play,
next-generation power-semiconductor company, celebrating 10 years
of power innovation founded in 2024. GaNFast™ power
ICs integrate gallium nitride (GaN) power and drive, with
control, sensing, and protection to enable faster charging, higher
power density, and greater energy savings.
Complementary GeneSiC™ power devices are optimized
high-power, high-voltage, and high-reliability silicon carbide
(SiC) solutions. Focus markets include EV, solar, energy storage,
home appliance / industrial, data center, mobile and consumer. Over
250 Navitas patents are issued or pending. As of August 2023, over
125 million GaN and 12 million SiC units have been shipped, and
with the industry’s first and only 20-year GaNFast warranty.
Navitas was the world’s first semiconductor company to
be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the
Navitas logo are trademarks or registered trademarks of Navitas
Semiconductor Limited and affiliates. All other brands, product
names and marks are or may be trademarks or registered trademarks
used to identify products or services of their respective
owners.
Contact InformationStephen Oliver, VP Corporate
Marketing & Investor Relationsir@navitassemi.com
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/d68f94c9-d19c-4094-a427-d9072412c4c0
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