Infineon Introduces Two New RF-Chips for LTE and 3G Mobile Handsets -- SMARTi LU for High Data Rate LTE and SMARTi UEmicro for L
15 January 2009 - 5:32AM
Marketwired
Infineon Technologies AG (FRANKFURT: IFX) (NYSE: IFX) today
announced it has sampled its 2nd Generation Long-Term-Evolution
(LTE) RF transceiver. The SMARTi(TM) LU is a single chip 65nm CMOS
RF transceiver providing 2G/3G/LTE functionality with a DigRF
digital baseband interface for highest Data Rates up to 150 Mbps in
LTE Networks.
Additionally Infineon announced the 3rd Generation of its
successful 3G RF transceiver family, SMARTi(TM) UE. The SMARTi(TM)
UEmicro is optimized for lowest cost 3G designs and enables an
RF-system e-BoM for Dual Band WCDMA/EDGE as low as US $6.50; about
40 percent lower than available solutions on the market.
"With the world's first single chip 2G/3G/LTE RF transceiver,
SMARTi LU, we once again demonstrate our leadership in providing
high performance, multi-mode RF transceiver solutions," says Stefan
Wolff, Vice President of the Wireless Solutions Division and
General Manager of the RF Engine business at Infineon. "In addition
to being the innovation leader for LTE RF, we are also addressing
the need for lowest cost 3G mobiles for the mass market by further
reducing component count and system cost with SMARTi UEmicro.
Meeting the ambitious cost targets of the consumer segment will
fuel the commercial roll out of 3G technology to emerging
markets."
SMARTi(TM) LU
SMARTi LU is a highly integrated 2G/3G/LTE multi-mode RF
transceiver compliant to 3GPP Rel.7 and Rel.8. It supports up to
six 3G and LTE Bands simultaneously with Quad Band GSM/EDGE. The
device supports the global spread of HSPA/LTE spectrum throughout a
wide variety of bands. With its MIPI DigRF v4 compliant high-speed
digital baseband interface, SMARTi LU sets a milestone towards "all
digital" implementation and enables the silicon intensive baseband
chips to follow a faster shrink path towards smaller technology
nodes such as 32nm and below. SMARTi LU is based on a standard 65nm
CMOS technology provided by multiple semiconductor foundries.
Samples and measurement results will be shown at this year's
Mobile World Congress in Barcelona.
SMARTi(TM) UEmicro
The SMARTi UEmicro is a single chip 2G/3G CMOS RF transceiver
for the low end segment of the 3G market. It is a cost down version
of the proven and widely adopted SMARTi UE with a backward
compatible hardware and software interface via DigRF v3.09. With
the elimination of external Low Noise Amplifiers (LNAs) and a
simplified co-banded RF frontend without Rx filters SMARTi UEmicro
perfectly matches mass market requirements for ultra low cost 3G
handsets. SMARTi UEmicro delivers exceptional RF performance for up
to three of the globally used WCDMA bands plus Dual- or Quad-Band
GSM/EDGE at lowest system cost.
Customer sampling will start beginning of 2nd quarter 2009, mass
production is planned for end of 2009.
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2008 fiscal year (ending September), the
company reported sales of Euro 4.3 billion with approximately
29,100 employees worldwide. With a global presence, Infineon
operates through its subsidiaries in the U.S. from Milpitas, CA, in
the Asia-Pacific region from Singapore, and in Japan from Tokyo.
Infineon is listed on the Frankfurt Stock Exchange and on the New
York Stock Exchange (ticker symbol: IFX). Infineon currently holds
a 77.5 percent equity interest in Qimonda AG, a leading supplier of
DRAM memory products. Qimonda is separately listed on the New York
Stock Exchange under the ticker symbol "QI."
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/.
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Media Relations Technology: Worldwide Headquarters Christoph von
Schierstaedt +49 89 234 22984 vonschierstaedt@infineon.com U.S.A.
Mitch Ahiers +1 408 503 2791 mitch.ahiers@infineon.com
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