Samsung Begins Mass Production of 10nm-class 16Gb LPDDR4X DRAM for Automobiles
25 April 2018 - 12:00PM
Business Wire
The new 16Gb LPDDR4X DRAM features
exceptionally high thermal endurance, with warranties for up to
125°C
Samsung Electronics Co., Ltd., the world leader in advanced
memory technology, today announced that it has begun mass producing
10-nanometer (nm)-class* 16-gigabit (Gb) LPDDR4X DRAM for
automobiles. The latest LPDDR4X features high performance and
energy efficiency while significantly raising the thermal endurance
level for automotive applications that often need to operate in
extreme environments. The 10nm-class DRAM will also enable the
industry’s fastest automotive DRAM-based LPDDR4X interface with the
highest density.
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Samsung 10nm-class 16Gb LPDDR4X DRAM for
Automobiles (Photo: Business Wire)
“The 16Gb LPDDR4X DRAM is our most advanced automotive solution
yet, offering global automakers outstanding reliability, endurance,
speed, capacity and energy efficiency,” said Sewon Chun, senior
vice president of memory marketing at Samsung Electronics. “Samsung
will continue to closely collaborate with manufacturers developing
diverse automotive systems, in delivering premium memory solutions
anywhere.”
Moving a step beyond its 20nm-class ‘Automotive Grade 2’ DRAM,
which can withstand temperatures from -40°C to 105°C, Samsung’s
16Gb LPDDR4X is Automotive Grade 1-compliant, raising the high-end
threshold to 125°C. By more than satisfying the rigorous on-system
thermal cycling tests of global auto manufacturers, the 16Gb
LPDDR4X has enhanced its reliability for a wide variety of
automotive applications in many of the world’s most challenging
environments.
Adding to the degree of reliability under high temperatures,
production at an advanced 10nm-class node is key to enabling the
16Gb LPDDR4X to deliver its leading-edge performance and power
efficiency. Even in environments with extremely high temperatures
of up to 125°C, its data processing speed comes in at 4,266
megabits per second (Mbps), a 14 percent increase from the 8Gb
LPDDR4 DRAM that is based on 20nm process technology, and the new
memory also registers a 30 percent increase in power
efficiency.
Along with a 256 gigabyte (GB) embedded Universal Flash Storage
(eUFS) drive announced in February, Samsung has expanded its
advanced memory solution lineup for future automotive applications
with the 10nm-class 16Gb LPDDR4X DRAM, commercially available in
12Gb, 16Gb, 24Gb and 32Gb capacities. While extending its
10nm-class DRAM offerings, the company also plans on bolstering
technology partnerships for automotive solutions that include
vision ADAS (Advanced Driver Assistance Systems), autonomous
driving, infotainment systems and gateways.
About Samsung Electronics Co.,
Ltd.
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*Editor’s Note: 10nm-class is a process node between 10 and 19
nanometers
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version on businesswire.com: https://www.businesswire.com/news/home/20180424006733/en/
for Samsung Semiconductor, Inc.John E. Lucas, APR,
925-872-2287j.lucas@partner.samsung.com