Infineon Announces Industry's First 900 V Superjunction MOSFETs; Increases Efficiency in Power Supply, Industrial and Renewable
26 February 2008 - 12:00AM
Marketwired
NEUBIBERG, GERMANY and AUSTIN, TX (NYSE: IFX) today introduced
the industry's first 900 V superjunction MOSFETs specifically
intended for high-efficiency SMPS (switched-mode power supply),
industrial and renewable energy applications. Continuing Infineon's
history of innovation in the power semiconductor industry, the new
energy-saving CoolMOS(TM) 900 V power MOSFET family overcomes the
"silicon limit" in power transistor manufacturing, and provides an
alternative for high-voltage designs using standard TO (Transistor
Outline) packages. With extremely low static and dynamic losses,
the CoolMOS 900 V family enables design of more efficient and
cost-effective topologies for such applications as LCD TVs, solar
power generation systems, PC "silverbox" power supplies and
lighting systems.
The Infineon CoolMOS family of power transistors uses an
innovative technology approach to overcome the silicon limit, a
characteristic of MOSFET semiconductors in which doubling of
voltage blocking capability leads to a five-fold increase in
RDS(on) (on-state resistance). In overcoming the silicon limit, the
CoolMOS 900 V devices achieve the industry's lowest RDS(on) per
package type. On-state resistances of 0.12 ohm in a TO-247 package,
0.34 ohm in a TO-220 package and 1.2 ohms in D-PAK packages are at
least 75 percent lower than can be achieved in such packages using
conventional 900 V MOSFETs. Because of the low RDS(on), the new
CoolMOS 900 V devices can offer an FOM (figure-of-merit, calculated
as on-state resistance times gate charge) as low as 34
ohms*nanocoulomb, which results in extremely low conduction,
driving and switching losses, and leads to increased
efficiency.
Expanded design possibilities in LCD TVs, PC "silverboxes,"
solar power generation systems
The combination of high blocking voltage with low conduction and
switching losses in the CoolMOS 900 V family enables designers to
develop more efficient power system topologies for a wide range of
applications. For example, quasi-resonant flyback designs for LCD
TV power supplies can benefit from a higher flyback voltage, which
provides a longer primary duty cycle with reduced peak current,
true zero-voltage switching and significantly lower voltage stress
on the secondary side. Because of their very low on-resistance, a
single CoolMOS 900 V product in a TO-220-FP package can be used in
such a design, rather than the two or more TO-220-FP packages that
must be used with conventional 900V MOSFETS. Compared to the most
common solution today, which uses 600 V MOSFETs, a CoolMOS 900V
solution gives a premium efficiency of more than 0.5 percent.
CoolMOS 900 V devices can be used to design "silverbox" PC power
supplies with a single-transistor-forward (STF) topology, achieving
the required high output power while still being compliant with the
"80 PLUS program," an industry initiative to ensure that PC power
supplies are at least 80 percent efficient. The STF topology is
easier to design, and has a simplified driver stage and reduced
parts count, resulting in cost improvements without efficiency
disadvantages, compared to such other solutions as
two-transistor-forward topologies.
In solar power generating systems, more photovoltaic converter
panels can be placed in series instead of in parallel if the MOSFET
voltage is increased to 900 V. This series connection reduces
cabling power losses and costs, with cabling costs alone cut by a
factor of two when changing from 600 V to 900 V devices.
The new CoolMOS devices also allow improved design of PFC (Power
Factor Correction) supplies and lighting ballasts, because they
permit designers to accept a higher DC link or input voltage. For
example, high-power applications that use three-phase PFC and PWM
stages with DC link voltages of up to 750 V will see such benefits
as higher power density from having the industry's lowest RDS(on)
in a small package, such as the TO-247.
Ballast designs for lamps that are fed from a three-phase mains
supply, such as special discharge lamps used in comfort lighting
and electronic lamp ballasts for street lights and greenhouse
heating lamps, will also benefit from topologies based on the
CoolMOS 900 V family.
Packaging, Availability and Price
CoolMOS 900 V family members will be available in several
industry-standard packages, including best-in-class devices with
RDS(on) of 120 m(omega), 340 m(omega) and 1200 m(omega) in TO-247,
TO-220, TO-220FP and D-PAK packages, respectively. In addition, 500
m(omega), 800 m(omega) and 1000 m(omega) devices will be
available.
Samples of the 340 m(omega) device in TO-220, TO-220FP and
TO-247 packages, and of the 1200 m(omega) part in a D-PAK, are
available now. The volume price for a best-in-class 120 m(omega)
part in a TO-247 package will be below US$3.50 (Euro 2.40).
Infineon is showing its new family of CoolMOS 900 V power
semiconductors in Booth #611 at the Applied Power Electronics
Conference (APEC), February 24 - 28, 2008, in Austin, Texas.
For further information, please see www.infineon.com/power and
www.infineon.com/coolmos
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2007 fiscal year (ending September), the
company reported sales of Euro 7.7 billion (including Qimonda sales
of Euro 3.6 billion) with approximately 43,000 employees worldwide
(including approximately 13,500 Qimonda employees). With a global
presence, Infineon operates through its subsidiaries in the U.S.
from Milpitas, CA, in the Asia-Pacific region from Singapore, and
in Japan from Tokyo. Infineon is listed on the Frankfurt Stock
Exchange and on the New York Stock Exchange (ticker symbol:
IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/
Contacts: Worldwide Headquarters Monika Sonntag +49 89 234 24497
monika.sonntag@infineon.com U.S.A. Agnes Toan +1 408 503 2587
agnes.toan@infineon.com Asia Chi Kang David Ong +65 6876 3070
david.ong@infineon.com Japan Hirotaka Shiroguchi +81 3 5745 7340
hirotaka.shiroguchi@infineon.com Investor Relations EU/APAC/USA/CAN
+49 89 234 26655 investor.relations@infineon.com
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