Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile World Congress 2014
25 February 2014 - 1:15AM
Business Wire
First CMOS PA to Deliver GaAs-Level Performance
for LTE Devices is an Integral Part of the UltraCMOS Global 1
System, the Industry’s First Reconfigurable RF Front End
MOBILE WORLD CONGRESS – Peregrine Semiconductor Corp. (NASDAQ:
PSMI), founder of RF SOI (silicon on insulator) and pioneer of
advanced RF solutions, hosts the first public demonstrations of the
UltraCMOS Global 1 power amplifier (PA) at Mobile World Congress
2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS Global 1 PA is
the industry’s first LTE CMOS PA to deliver the performance level
of gallium arsenide (GaAs) PAs, and it offers the unique benefit of
being integrated onto a single chip with Peregrine’s Global 1
system, the first reconfigurable RF front end (RFFE). Only with an
integrated, reconfigurable RFFE can 4G LTE platform providers and
OEMs create a single-SKU handset design for global markets.
Why:
To support over 40 frequency bands and a
more than 5,000-fold increase in the number of possible operating
states, a truly reconfigurable RFFE is now a requirement. This
level of reconfigurability is only feasible with a CMOS process.
Peregrine’s entire UltraCMOS Global 1 system – multimode, multiband
(MMMB) power amplifier (PA); post-PA switch; antenna switch; and
antenna tuner – is based on Peregrine’s UltraCMOS 10 technology
platform. This platform leverages 25 years of RF expertise with
proven performance demonstrated by more than 2 billion RF SOI units
shipped. Before now, no vendor has been able to deliver GaAs-level
PA performance in a CMOS PA, which prevented CMOS PAs from
competing in the performance-driven LTE handset market. In the
demonstration, visitors will see that the UltraCMOS Global 1 PA has
the same raw performance as the leading GaAs PAs, as well as a
33-percent efficiency increase over other CMOS PAs. This level of
performance is reached without enhancements from envelope tracking
or digital predistortion, which is often used when benchmarking
CMOS PAs with GaAs PAs.
When: Feb. 24-27, 2014 Where: Mobile World Congress 2014 Fira Gran
Via – Barcelona, Spain Hall 2, Meeting Room 2A20MR Contact:
Kimberly Stoddard, pr@psemi.com, +1 (415)
806-5793
ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI
(silicon on insulator), is a leading fabless provider of
high-performance, integrated RF solutions. Since 1988 Peregrine and
its founding team have been perfecting UltraCMOS® technology – a
patented, advanced form of SOI – to deliver the performance edge
needed to solve the RF market’s biggest challenges, such as
linearity. With products that deliver best-in-class performance and
monolithic integration, Peregrine is the trusted choice for market
leaders in automotive, broadband, industrial, Internet of Things,
military, mobile devices, smartphones, space, test-and-measurement
equipment and wireless infrastructure. Peregrine holds more than
170 filed and pending patents and has shipped more than 2 billion
UltraCMOS units. For more information, visit
http://www.psemi.com.
The Peregrine Semiconductor name, logo, and
UltraCMOS are registered trademarks of Peregrine Semiconductor
Corporation in the U.S.A., and other countries. All other
trademarks mentioned herein are the property of their respective
owners.
Peregrine SemiconductorKimberly Stoddard,
+1-415-806-5793pr@psemi.com
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