Toshiba Releases Power MOSFETs with High-Speed Diodes that Help to Improve Efficiency of Power Supplies
22 February 2024 - 1:00PM
Business Wire
- New additions to the latest generation
DTMOSVI Series with the super junction structure -
Toshiba Electronic Devices & Storage Corporation ("Toshiba")
has added DTMOSVI(HSD), power MOSFETs with high-speed diodes
suitable for switching power supplies, including data centers and
photovoltaic power conditioners, to its latest-generation[1]
DTMOSVI series with a super junction structure. Shipments of the
first two products "TK042N65Z5” and “TK095N65Z5," 650V N-channel
power MOSFETs in TO-247 packages, start today.
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the full release here:
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Toshiba: DTMOSVI(HSD), power MOSFETs with
high-speed diodes that help to improve efficiency of power
supplies. (Graphic: Business Wire)
The new products use high-speed diodes to improve the reverse
recovery[2] characteristics important for bridge circuit and
inverter circuit applications. Against the standard DTMOSVI, they
achieve a 65% reduction in reverse recovery time (trr), and an 88%
reduction in reverse recovery charge (Qrr) (measurement conditions:
-dIDR/dt= 100A/μs).
The DTMOSVI(HSD) process used in the new products improves on
the reverse recovery characteristics of Toshiba's DTMOSIV series
with high-speed diodes (DTMOSIV(HSD)), and has a lower drain
cut-off current at high temperatures. The figure of merit
"drain-source On-resistance × gate-drain charges" is also lower.
The high temperature drain cut-off current of TK042N65Z5 is
approximately 90%[3] lower, and the drain-source On-resistance ×
gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5[4]
[5]. This advance will cut equipment power loss and help to improve
efficiency. The TK042N65Z5 shows a maximum improvement in power
supply efficiency over the current TK62N60W5 of about 0.4%, as
measured in a 1.5kW LLC circuit[6].
A reference design, “1.6kW Server Power Supply (Upgraded)”, that
uses TK095N65Z5 is available on Toshiba’s website today. The
company also offers tools that support circuit design for switching
power supplies. Alongside the G0 SPICE model, which verifies
circuit function in a short time, highly accurate G2 SPICE models
that accurately reproduce transient characteristics are now
available.
Toshiba plans to expand the DTMOSVI(HSD) line-up with the
release of devices in TO-220 and TO-220SIS through-hole packages,
and TOLL and DFN 8×8 surface-mount packages.
The company also will continue to expand its line-up of the
DTMOSVI series beyond the already released 650V and 600V products
and the new products with high-speed diodes. This will enhance
switching power supply efficiency, contributing to energy-saving
equipment.
Notes: [1] As of February 22, 2024, Toshiba survey. [2] A
switching action in which the MOSFET body diode switches from
forward to reverse biased. [3] Values measured by Toshiba. The new
products TK042N65Z5 is 0.2mA (test condition: VDS=650V, VGS=0V,
Ta=150°C.) The existing products TK62N60W5 is 1.9mA (test
condition: VDS=600V, VGS=0V, Ta=150°C). [4] 600V DTMOSIV(HSD)
series [5] Values measured by Toshiba. Test condition: TK62N60W5 •
RDS(ON): ID=30.9A, VGS=10V, Ta=25°C • Qgd: VDD=400V, VGS=10V,
ID=61.8A, Ta=25°C TK042N65Z5 • RDS(ON): ID=27.5A, VGS=10V, Ta=25°C
• Qgd: VDD=400V, VGS=10V, ID=55A, Ta=25°C [6] Values measured by
Toshiba. Test condition: Vin=380V, Vout=54V, Ta=25°C
Applications
Industrial equipment
- Switching power supplies (data center servers, communications
equipment, etc.)
- EV charging stations
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- MOSFETs with high-speed diodes in the latest-generation DTMOSVI
series
- Reverse recovery time due to high-speed diodes: TK042N65Z5
trr=160ns (typ.) TK095N65Z5 trr=115ns (typ.)
- High-speed switching time due to low gate-drain charge:
TK042N65Z5 Qgd=35nC (typ.) TK095N65Z5 Qgd=17nC (typ.)
Main Specifications
(Ta=25°C unless otherwise
specified)
Part number
TK042N65Z5
TK095N65Z5
Package
Name
TO-247
Size (mm)
Typ.
15.94×20.95, t=5.02
Absolute
maximum
ratings
Drain-source voltage VDSS (V)
650
Drain current (DC) ID (A)
55
29
Drain-source On-resistance
RDS(ON) (Ω)
VGS=10 V
Max
0.042
0.095
Total gate charge Qg (nC)
Typ.
105
50
Gate-drain charge Qgd (nC)
Typ.
35
17
Input capacitance Ciss (pF)
Typ.
6280
2880
Channel-to-case thermal
resistance Rth(ch-c) (°C/W)
Max
0.347
0.543
Reverse recovery time trr
(ns)
Typ.
160
115
Toshiba’s current series
(DTMOSIV) part number
TK62N60W5[7]
TK35N65W5,
TK31N60W5[7]
Note: [7] VDSS=600V
Follow the links below for more on the new products. TK042N65Z5
TK095N65Z5
Follow the link below for more on Toshiba MOSFETs. MOSFETs
* Company names, product names, and service names may be
trademarks of their respective companies. * Information in this
document, including product prices and specifications, content of
services and contact information, is current on the date of the
announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage
Corporation
Toshiba Electronic Devices & Storage Corporation, a leading
supplier of advanced semiconductor and storage solutions, draws on
over half a century of experience and innovation to offer customers
and business partners outstanding discrete semiconductors, system
LSIs and HDD products. The company's 21,500 employees around the
world share a determination to maximize product value, and promote
close collaboration with customers in the co-creation of value and
new markets. With annual sales approaching 800-billion yen (US$6.1
billion), Toshiba Electronic Devices & Storage Corporation
looks forward to building and to contributing to a better future
for people everywhere. Find out more at
https://toshiba.semicon-storage.com/ap-en/top.html
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