Tower Semiconductor SiGe Technology Adopted by Renesas Electronics for Production of its Market Leading SATCOM RFICs
04 March 2020 - 11:00PM
NEWS ANNOUNCEMENT
FOR IMMEDIATE
RELEASE
The compact and highly efficient Ku- and
Ka-Band active beamforming and Low Noise Amplifier RFICs will
enable next-generation terminals that utilize phased array antennas
for LEO, MEO and GEO satellite communications
MIGDAL HAEMEK, Israel, March 4,
2020 –Tower Semiconductor (NASDAQ/TASE: TSEM), the
leading foundry of high value analog semiconductor solutions, today
announced that Tower Semiconductor’s SiGe BiCMOS platform was
selected for the development and production of Renesas Electronics’
market-leading beamforming and amplifier RFICs for phased array
antenna applications.
Phased array antennas or more specifically
active electronically scanned arrays (AESAs) have been a staple of
the defense industry for over 40 years, but are now rapidly
emerging in the commercial marketplace due to the exponentially
growing demands for connectivity. These antennas will be critical
to the enablement of high data-rate, low latency connectivity in
the air, at sea and on the ground, taking advantage of the rapid
growth in throughput from existing GEO and emerging
non-geostationary (NGSO) LEO/MEO satellite networks.
“In migrating to AESAs from mechanical antennas,
our customers require reliable, compact and cost-effective ICs with
exceptionally low power consumption and noise figure that meet
their system EIRP and G/T requirements,” said Naveen Yanduru, Vice
President of RF Communications, Industrial and Communications
Business Division at Renesas. “Thanks to the strong collaboration
between Tower Semiconductor and our world-class design team, we are
exceeding our customer’s expectations by all metrics and
progressing rapidly into production.”
By leveraging Tower Semiconductor’s
high-performance SiGe BiCMOS technology, Renesas is able to achieve
unprecedented levels of integration. For example, the Renesas 8-ch
transmit IC has a footprint of only two square millimeters per
transmit channel and consumes less than 100 mW, while delivering 10
dBm of output power. Several design parameters had to be pushed to
their limits to achieve these results and required a close
collaboration between the companies to ensure the accuracy of
design models and first-pass success. During early development, the
Renesas design team also took advantage of the flexibility and
customization of the Tower Semiconductor process offerings to
identify the optimal compromise between cost and performance.
“We are pleased to be working with a leader such
as Renesas that is leveraging the value of our SiGe Terabit
platform to deliver breakthrough phased array product performance
for Satcom applications,” said Marco Racanelli, Tower Semiconductor
Sr. Vice President and General Manager of Analog IC Business Unit.
“This complements the booming opportunities we see for similar
phased array products in 5G mmWave and automotive radar where SiGe
offers dramatically lower power consumption than alternatives while
preserving the ability for high levels of integration and low
cost.”
By some estimates, the Satcom market is
projected to grow to $50 billion by 2027 at a CAGR of 10%. In the
same timeframe, the number of satellites is projected to triple
from approximately 8,000 to 24,000, primarily driven by growth in
NGSO communications satellites providing ubiquitous high-data rate
and low latency communications. This is expected to fuel a
transition from fixed and mechanically steered antennas to
electronically steered antennas, creating a significant market for
beamforming ICs.
For additional information about Renesas
Electronics Corporation, please click here.
For additional information about Tower
Semiconductor’s technology, please click here.
About Tower Semiconductor
Tower Semiconductor Ltd. (NASDAQ: TSEM, TASE:
TSEM), the leading foundry of high value analog semiconductor
solutions, provides technology and manufacturing platforms for
integrated circuits (ICs) in growing markets such as consumer,
industrial, automotive, mobile, infrastructure, medical and
aerospace and defense. Tower Semiconductor’s focuses on creating
positive and sustainable impact on the world through long term
partnerships and its advanced and innovative analog technology
offering, comprised of a broad range of customizable process
platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS
image sensor, non-imaging sensors, integrated power management (BCD
and 700V), and MEMS. Tower Semiconductor also provides world-class
design enablement for a quick and accurate design cycle as well as
Transfer Optimization and development Process Services (TOPS) to
IDMs and fabless companies. To provide multi-fab sourcing and
extended capacity for its customers, Tower Semiconductor operates
two manufacturing facilities in Israel (150mm and 200mm), two in
the U.S. (200mm) and three facilities in Japan (two 200mm and one
300mm) through TPSCo. For more information, please visit
www.towersemi.com.
###
Tower Semiconductor Company
Contact: Orit Shahar | +972-74-7377440 |
oritsha@towersemi.com
Tower Semiconductor Investor Relations
Contact: Noit Levi | +972-4-604-7066 |
noit.levi@towersemi.com
- Renesas Tower Semiconductor Satcom SiGe_FINAL
- Tower Semiconductor SiGe Technology
Tower Semiconductor (NASDAQ:TSEM)
Historical Stock Chart
From Apr 2024 to May 2024
Tower Semiconductor (NASDAQ:TSEM)
Historical Stock Chart
From May 2023 to May 2024