DALLAS, March 13, 2015 /PRNewswire/ -- Texas
Instruments (TI) (NASDAQ: TXN) today introduced the industry's
first 80-V, 10-A integrated gallium nitride (GaN) field-effect
transistor (FET) power-stage prototype, which consists of a
high-frequency driver and two GaN FETs in a half-bridge
configuration – all in an easy-to-design quad flat no-leads (QFN)
package. For more information, visit www.ti.com/lmg5200-pr.
The new LMG5200 GaN FET power stage will help accelerate market
adoption of next-generation GaN power-conversion solutions that
provide increased power density and efficiency in
space-constrained, high-frequency industrial and telecom
applications. The power stage will be highlighted as part of a 48-V
digital power demonstration at the Applied Power Electronics
Conference (APEC), in Charlotte, North
Carolina, March 16-18 (booth
No. 1001). Follow TI at www.ti.com/APEC15.
"One of the biggest barriers to GaN-based power design has been
the uncertainties around driving GaN FETs and the resulting
parasitics due to packaging and design layout," said Steve Lambouses, vice president of TI's
High-Voltage Power Solutions business. "We help power designers
realize the full power potential of GaN technology by offering them
a complete, reliable power-conversion ecosystem of optimized
integrated modules, drivers and high-frequency controllers in
advanced, easy-to-design packaging."
Enabling the GaN advantage
Typically, designers who use GaN FETs that switch at high
frequencies must be careful with board layout to avoid ringing and
electromagnetic interference (EMI). TI's LMG5200 dual 80-V power
stage prototype significantly eases this issue while increasing
power-stage efficiency by reducing packaging parasitic inductances
in the critical gate-drive loop. The LMG5200 features advanced
multichip packaging technology and is optimized to support
power-conversion topologies with frequencies up to 5 MHz.
The easy-to-use 6-mm by 8-mm QFN package requires no underfill,
which significantly simplifies manufacturing. The reduced footprint
solidifies the value of GaN technology and will help increase
adoption of GaN power designs in many new applications, ranging
from new high-frequency wireless charging applications to 48-V
telecom and industrial designs. For more information on TI's
complete GaN solution, visit: www.ti.com/gan-pr.
Key features and benefits of the LMG5200:
- Highest power density. The first integrated 80-V
half-bridge GaN power stage delivers 25 percent lower power losses
compared to silicon-based designs, enabling single-stage
conversion.
- Comprehensive GaN-specific quality program for
reliability. Read more here.
- Lowest packaging parasitic inductance in the critical
gate-drive loop increases power-stage efficiency and enhances dV/dt
immunity while reducing EMI.
- Simplified layout and manufacturability. Easy-to-use QFN
package eliminates the need for underfill to address high-voltage
spacing concerns, improving board manufacturability and
reducing cost.
Tools and software
In addition to ordering the available LMG5200 evaluation module
(EVM), designers can get started faster using PSpice and TINA-TI
models for the LMG5200 to simulate the performance and switching
frequency advantages of this technology.
Availability and pricing
Prototype samples of the GaN power stage are available to
purchase now in the TI Store. The LMG5200 is priced at US$50 each with a maximum purchase of 10 units.
The LMG5200 EVM is available for US$299.
Additional resources:
- Check out TI's comprehensive portfolio of GaN solutions.
- Download the following white papers:
- GaN FET module performance advantage versus silicon.
- A comprehensive methodology to qualify the reliability of GaN
products.
- Advancing power supply solutions through the promise of
GaN.
- Join the TI E2E™ Community Gallium Nitride (GaN) to find
solutions, get help, share knowledge and solve problems with fellow
engineers and TI experts.
About Texas Instruments
Texas Instruments Incorporated (TI) is a global semiconductor
design and manufacturing company that develops analog integrated
circuits (ICs) and embedded processors. By employing the world's
brightest minds, TI creates innovations that shape the future of
technology. TI is helping more than 100,000 customers transform the
future, today. Learn more at www.ti.com.
Trademarks
TI E2E is a trademark of Texas Instruments. All registered
trademarks and other trademarks belong to their respective
owners.
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SOURCE Texas Instruments