New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications With Industry-Best Peak Out
01 April 2008 - 11:00PM
Marketwired
NEUBIBERG, GERMANY (NYSE: IFX), a leading supplier of
communication ICs and solutions, today announced two new LDMOS RF
power transistors targeting wireless infrastructure applications,
such as WiMAX, in the 2.5 GHz-to-2.7 GHz frequency band. These
products, which provide peak output power of up to 170 W, extend
Infineon's broad portfolio of RF power transistors for WiMAX
applications, which currently includes 10 W, 45 W and 130 W
devices. The high peak power performance of the new LDMOS RF power
transistors will enable designers to simplify their RF power
amplifier designs.
"With this addition to its comprehensive product portfolio,
Infineon continues to offer the highest peak power RF power
transistors in the market," said Helmut Volger, Vice President and
General Manager for RF Power, Infineon Technologies. "As the
wireless infrastructure market adopts WiMAX and other new
technologies, such products as Infineon's LDMOS RF power
transistors, with their enhanced features and capabilities, become
a crucial element in a designer's tool kit. The higher peak power
enables designers to develop a simpler design, and lowers the
overall bill of materials."
Infineon's PTFA260851E/F 85W FET features 14 dB gain (typical)
and 22 percent efficiency (typical) at 16 W average output power,
under WiMAX signal conditions. The PTFA261702E 170W FET features 15
dB gain (typical) and 20 percent efficiency at 32 W average output
power, under WiMAX signal conditions.
Infineon's PTFA261702E is rated at 170W (P-1 dB), the industry's
highest peak output power in the 2.5 GHz-to-2.7 GHz band. The
transistor's architecture provides electrically isolated halves
that ease use in Doherty power amplifier applications. The device
can also be used in a push-pull configuration for extended
bandwidth performance.
Both products are available in lead-free, RoHS-compliant ceramic
packages. Operating at 28 V, these transistors provide broadband
internal matching, and are capable of handling a 10:1 VSWR (voltage
standing wave ratio) at CW (continuous wave) power output and 28 V
supply voltage.
Availability
Infineon's PTFA260851E/F and PTFA261702E are now in production.
For pricing and more information, please contact
highpowerRF@infineon.com or call 1-877-465-3667 (GO LDMOS).
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2007 fiscal year (ending September), the
company reported sales of Euro 7.7 billion (including Qimonda sales
of Euro 3.6 billion) with approximately 43,000 employees worldwide
(including approximately 13,500 Qimonda employees). With a global
presence, Infineon operates through its subsidiaries in the U.S.
from Milpitas, CA, in the Asia-Pacific region from Singapore, and
in Japan from Tokyo. Infineon is listed on the Frankfurt Stock
Exchange and on the New York Stock Exchange (ticker symbol:
IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/.
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Media Relations Technology: Worldwide Headquarters Christoph von
Schierst�dt +49 89 234 22984 vonschierstaedt@infineon.com U.S.A.
Agnes Toan +1 408 503 2587 agnes.toan@infineon.com Asia Chi Kang
David Ong +65 6876 3070 david.ong@infineon.com Japan Hirotaka
Shiroguchi +81 3 5745 7340 hirotaka.shiroguchi@infineon.com
Investor Relations EU/APAC/USA/CAN +49 89 234 26655
investor.relations@infineon.com
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