3D X-AI™ chip technology is targeted to
replace the existing HBM chips and solve data bus bottlenecks,
received top honors at FMS 2024
SAN
JOSE, Calif., Aug. 6, 2024
/PRNewswire/ -- NEO Semiconductor, a leading developer of
innovative technologies for 3D NAND flash memory and 3D DRAM,
announced today that its ground-breaking technology, 3D X-AI™,
captured the top prize at FMS: The Future of Memory and Storage
2024, winning the "Best of Show" award for the Most Innovative
Artificial Intelligence (AI) Application. This category
recognizes how a product or service that includes all forms of
high-performance memory or storage is being used to solve a
specific AI problem, and also includes the use of AI in storage and
memory products, or potentially in a product that accelerates AI
tasks.
"In order to enable emerging and future AI use cases,
AI solutions demand AI chips that can deliver higher
performance, greater scalability and neural network efficiencies,"
said Jay Kramer, Chairman of the
Awards Program and President of Network Storage Advisors Inc.
"We are proud to recognize NEO Semiconductor's 3D
X-AI™ as the world's first 3D memory with AI
processing, which accelerates neural performance by 100X and
reduces power consumption by 99%."
"Today we announced a novel architecture: AI Processing in 3D
Memory. NEO's 3D X-AI™ chip will allow the data of large models
to be processed inside the memory, so it dramatically increases the
AI performance and reduces the power consumption," said
Andy Hsu, Founder and CEO of NEO
Semiconductor. "We are honored and thankful to accept this
prestigious award, and I applaud the entire NEO Semiconductor team
for the hard work and dedication it has taken to make this
ground-breaking technology a reality."
Visit NEO Semiconductor's booth #507 @ FMS: The Future of Memory
and Storage2024, Santa Clara,
CA.
About NEO Semiconductor
NEO Semiconductor is a high-tech company focused on advancing 3D
NAND flash, 3D DRAM, and 3D AI technologies. The company was
founded in 2012 by Andy Hsu and a
team in San Jose, California, and
owns more than 25 U.S. patents. In 2020, the company made a
breakthrough in 3D NAND architecture named
X-NAND™ that can achieve SLC performance from TLC
and QLC memory to provide high-speed, low-cost solutions for many
applications, including 5G and AI. In 2022, the company launched
its X-DRAM™ technology, representing a new
architecture that can deliver DRAM with the world's lowest power
consumption. In 2023, NEO launched its ground-breaking 3D
X-DRAM™ technology, a game changer in the memory
industry, enabling the world's first 3D NAND-like DRAM to solve
capacity scaling bottlenecks and move the market past the
limitations of 2D DRAM. In 2024, 3D
X-AI™ technology was unveiled to pioneer AI neural
networks in 3D memory to revolutionize the performance, power
consumption, and cost of AI Chips. For more information, visit
https://neosemic.com/.
Media and Analyst Contact:
Maya Lustig
mayalustig@neosemic.com
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SOURCE NEO Semiconductor